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| JMnic Product Specification Silicon PNP Power Transistors 2SA1290 DESCRIPTION With TO-220 package Short switching time Low collector saturation voltage Complement to type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters,converters Power amplifier Switching regulator ,driver PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -7 -10 35 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,RBE= IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-3.5A; IB=-0.175A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 100 MIN -60 -80 -7 TYP. 2SA1290 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT MAX UNIT V V V -0.4 -100 -100 280 |I |I V A A MHz Switching times ton tstg tf Turn-on time Storage time Fall time VCC=-20V; IC=-3A IB1=-IB2=-0.15A;RL=6.67| 0.1 0.5 0.1 |I |I |I s s s hFE Classifications Q 70-140 R 100-200 S 140-280 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1290 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SA1290 4 |
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